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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general highcurrent switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Emitter PARAMETER Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak SEM GE Open base OND IC TOR UC VALUE -60 -50 -6 -12 -17 CONDITIONS UNIT V V V A A W ae ae Open emitter Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A ;IB=-0.3A VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -60 -50 -6 TYP. 2SB828 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA Switching times ton tstg tf Transition frequency Turn-on time Storage time Fall time ANG INCH R 100-200 S 140-280 EMIC ES DUC ON 10 TOR MHz 0.2 0.1 0.4 |I |I |I s s s IC=-5.0A; IB1=-IB2=-0.5A RL=4| hFE-1 Classifications Q 70-140 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB828 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB828 SEM GE HAN INC OND IC TOR UC 4 |
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